DocumentCode :
1485369
Title :
The design and operation of a second-generation carrier-domain magnetometer device
Author :
Manley, M.H. ; Bloodworth, G.G.
Author_Institution :
Signetics Corp., Sunnyvale, USA
Volume :
53
Issue :
3
fYear :
1983
fDate :
3/1/1983 12:00:00 AM
Firstpage :
125
Lastpage :
132
Abstract :
The carrier-domain magnetometer generates an electrical output having a frequency proportional to an applied magnetic field, arising from the rotation of the current distribution in a circular bipolar transistor structure with its axis parallel to the field. An improved version of this silicon transducer has been designed and investigated, which has a sensitivity of about 100 kHz/T. The sensitivity depends on temperature and electrical bias conditions, and compensation techniques are described. If a magnetic field is applied parallel to the plane of the circle, its angular position can be monitored since the domain follows it.
Keywords :
magnetic field measurement; magnetometers; rotation; transducers; Si; angular position; applied magnetic field; carrier-domain magnetometer device; circular bipolar transistor; current distribution; electrical bias; electrical output; rotation; sensitivity; silicon transducer; temperature;
fLanguage :
English
Journal_Title :
Radio and Electronic Engineer
Publisher :
iet
ISSN :
0033-7722
Type :
jour
DOI :
10.1049/ree.1983.0027
Filename :
5269571
Link To Document :
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