• DocumentCode
    1485388
  • Title

    Variability Analysis of TiN Metal-Gate FinFETs

  • Author

    Endo, Kazuhiko ; O´Uchi, Shin´Ichi ; Ishikawa, Yuki ; Liu, Yongxun ; Matsukawa, Takashi ; Sakamoto, Kunihiro ; Tsukada, Junichi ; Yamauchi, Hiromi ; Masahara, Meishoku

  • Author_Institution
    Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba, Japan
  • Volume
    31
  • Issue
    6
  • fYear
    2010
  • fDate
    6/1/2010 12:00:00 AM
  • Firstpage
    546
  • Lastpage
    548
  • Abstract
    Variability of TiN FinFET performance is comprehensively studied. It is found that the variation of the in the FinFET occurs and the standard deviations of the of nMOS and pMOS FinFETs are almost the same. From the analytical results, it is found that the variation of the TiN FinFET is due to the work function variation (WFV) of TiN metal gate. The WFV is also responsible for the on-current variation.
  • Keywords
    MOSFET; titanium compounds; TiN; TiN metal-gate FinFET; nMOS FinFET; on-current variation; pMOS FinFET; variability analysis; work function variation; FinFET; metal gate (MG); variability; work function (WF);
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2010.2047091
  • Filename
    5460908
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1485388