Title :
Variability Analysis of TiN Metal-Gate FinFETs
Author :
Endo, Kazuhiko ; O´Uchi, Shin´Ichi ; Ishikawa, Yuki ; Liu, Yongxun ; Matsukawa, Takashi ; Sakamoto, Kunihiro ; Tsukada, Junichi ; Yamauchi, Hiromi ; Masahara, Meishoku
Author_Institution :
Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba, Japan
fDate :
6/1/2010 12:00:00 AM
Abstract :
Variability of TiN FinFET performance is comprehensively studied. It is found that the variation of the in the FinFET occurs and the standard deviations of the of nMOS and pMOS FinFETs are almost the same. From the analytical results, it is found that the variation of the TiN FinFET is due to the work function variation (WFV) of TiN metal gate. The WFV is also responsible for the on-current variation.
Keywords :
MOSFET; titanium compounds; TiN; TiN metal-gate FinFET; nMOS FinFET; on-current variation; pMOS FinFET; variability analysis; work function variation; FinFET; metal gate (MG); variability; work function (WF);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2010.2047091
