DocumentCode
1485452
Title
Continuous-wave operation of 1.30μm GaAsSb/GaAs VCSELs
Author
Anan, T. ; Yamada, M. ; Nishi, K. ; Kurihara, K. ; Tokutome, K. ; Kamei, A. ; Sugou, S.
Author_Institution
Real World Comput. Partnership, Opt. Interconnection NEC Lab., Ibaraki, Japan
Volume
37
Issue
9
fYear
2001
fDate
4/26/2001 12:00:00 AM
Firstpage
566
Lastpage
567
Abstract
1.30 μm VCSELs using GaAsSb quantum wells, which operate continuous-wave at and above room temperature (RT), are reported. A threshold current as low as 1.2 mA at RT and a maximum CW operating temperature of 70°C are demonstrated
Keywords
III-V semiconductors; MOCVD; gallium arsenide; gallium compounds; laser beams; laser cavity resonators; optical fabrication; quantum well lasers; surface emitting lasers; vapour phase epitaxial growth; 1.2 mA; 1.3 mum; 298 K; 70 C; GaAsSb; GaAsSb quantum wells; GaAsSb-GaAs; GaAsSb/GaAs VCSELs; continuous-wave operation; maximum CW operating temperature; operating temperature; room temperature; threshold current;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20010405
Filename
920917
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