Title :
Continuous-wave operation of 1.30μm GaAsSb/GaAs VCSELs
Author :
Anan, T. ; Yamada, M. ; Nishi, K. ; Kurihara, K. ; Tokutome, K. ; Kamei, A. ; Sugou, S.
Author_Institution :
Real World Comput. Partnership, Opt. Interconnection NEC Lab., Ibaraki, Japan
fDate :
4/26/2001 12:00:00 AM
Abstract :
1.30 μm VCSELs using GaAsSb quantum wells, which operate continuous-wave at and above room temperature (RT), are reported. A threshold current as low as 1.2 mA at RT and a maximum CW operating temperature of 70°C are demonstrated
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; gallium compounds; laser beams; laser cavity resonators; optical fabrication; quantum well lasers; surface emitting lasers; vapour phase epitaxial growth; 1.2 mA; 1.3 mum; 298 K; 70 C; GaAsSb; GaAsSb quantum wells; GaAsSb-GaAs; GaAsSb/GaAs VCSELs; continuous-wave operation; maximum CW operating temperature; operating temperature; room temperature; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010405
