Title :
Laterally coupled InGaAsP/InP distributed feedback lasers at 1.5 μm for chemical sensing applications
Author :
Sin, Y.K. ; Qiu, Y. ; Muller, R.E. ; Forouhar, S.
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
fDate :
4/26/2001 12:00:00 AM
Abstract :
Data is presented on stable, tunable single-mode operation from laterally coupled InGaAsP/InP ridge waveguide distributed feedback lasers at ~1.5 μm, suitable for chemical sensing, realised by a greatly simplified fabrication process requiring a single MOCVD growth step. Completed lasers show sidemode suppression ratios as high as 47 dB and wavelength shifts with injection current of 0.035 nm/mA (or 4.5 GHz/mA)
Keywords :
III-V semiconductors; MOCVD; chemical sensors; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; laser beams; laser feedback; laser modes; laser tuning; measurement by laser beam; optical couplers; optical fabrication; ridge waveguides; semiconductor lasers; waveguide lasers; 1.5 mum; InGaAsP-InP; InGaAsP/InP; chemical sensing; chemical sensing applications; distributed feedback lasers; fabrication; greatly simplified fabrication process; injection current; laterally coupled distributed feedback lasers; laterally coupled ridge waveguide distributed feedback lasers; ridge waveguide distributed feedback lasers; sidemode suppression ratios; single MOCVD growth step; single-mode operation; stable tunable single-mode operation; wavelength shifts;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010375
