Singlemode output power enhancement of InGaAs VCSELs by reduced spatial hole burning via surface etching

Author

Unold, H.J. ; Golling, M. ; Mederer, F. ; Michalzik, R. ; Supper, D. ; Ebeling, K.J.

Author_Institution

Dept. of Optoelectron., Ulm Univ., Germany

Volume

37

Issue

9

fYear

2001

fDate

4/26/2001 12:00:00 AM

Firstpage

570

Lastpage

572

Abstract

Completely singlemode MBE-grown selectively oxidised InGaAs-VCSELs with aperture diameters of up to 14 μm have been fabricated using a self-aligned shallow surface etch. By choosing the growth position accordingly, a continuous variation of the aperture diameter across the wafer is achieved to optimise the surface etch to aperture diameter ratio. A record singlemode output power of 5.7 mW (30 dB SMSR) is obtained for a 5.8 μm-aperture diameter, 2.8 μm etch spot diameter device

Keywords

III-V semiconductors; etching; gallium arsenide; indium compounds; laser beams; laser cavity resonators; laser modes; molecular beam epitaxial growth; optical fabrication; optical hole burning; semiconductor lasers; surface emitting lasers; 14 mum; 2.8 mum; 5.7 mW; 5.8 mum; InGaAs; InGaAs-VCSELs; VCSELs; aperture diameter; aperture diameters; continuous variation; etch spot diameter device; fabrication; growth position; reduced spatial hole burning; self-aligned shallow surface etch; singlemode MBE-grown selectively oxidised material; singlemode output power; singlemode output power enhancement; surface etch; surface etch to aperture diameter ratio; surface etching; wafer;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20010407

Filename

920920