DocumentCode :
1485484
Title :
Design Of Ion-implanted MOSFET´s with Very Small Physical Dimensions
Author :
Dennard, Robert H. ; Gaensslen, Fritz H. ; YU, HWA-NIEN ; Rideout, V. Leo ; BASSOUS, ERNEST ; LEBLANC, ANDRE R.
Volume :
87
Issue :
4
fYear :
1999
fDate :
4/1/1999 12:00:00 AM
Firstpage :
668
Lastpage :
678
Keywords :
Dielectric substrates; Digital integrated circuits; Doping profiles; Ion implantation; MOSFET circuits; Predictive models; Semiconductor process modeling; Silicon; Switching circuits; Threshold voltage;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/JPROC.1999.752522
Filename :
752522
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1485484
