DocumentCode
1485532
Title
RTS Noise Characterization in Single-Photon Avalanche Diodes
Author
Karami, Mohammad Azim ; Carrara, Lucio ; Niclass, Cristiano ; Fishburn, Matthew ; Charbon, Edoardo
Author_Institution
Delft Univ. of Technol., Delft, Netherlands
Volume
31
Issue
7
fYear
2010
fDate
7/1/2010 12:00:00 AM
Firstpage
692
Lastpage
694
Abstract
Random telegraph signal (RTS) behavior is reported and characterized in the dark count rate of single-photon avalanche Diodes (SPADs). The RTS is observed in a SPAD fabricated in 0.8-μm CMOS technology and in four proton-irradiated SPADs designed and fabricated in 0.35-μm CMOS technology. The RTS characteristics are evaluated experimentally and verified theoretically with respect to bias and temperature.
Keywords
CMOS integrated circuits; avalanche diodes; integrated circuit noise; CMOS technology; RTS behavior; RTS characteristics; RTS noise characterization; dark count rate; proton-irradiated SPAD; random telegraph signal; single-photon avalanche diodes; size 0.35 mum; size 0.8 mum; Dark count rate (DCR); random telegraph signal (RTS); single-photon avalanche diodes (SPADs);
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2010.2047234
Filename
5460930
Link To Document