Title :
Low-Voltage-Driven Flexible InGaZnO Thin-Film Transistor With Small Subthreshold Swing
Author :
Su, Nai-Chao ; Wang, Shui-Jinn ; Huang, Chin-Chuan ; Chen, Yu-Han ; Huang, Hao-Yuan ; Chiang, Chen-Kuo ; Chin, Albert
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fDate :
7/1/2010 12:00:00 AM
Abstract :
A flexible thin-film transistor (TFT) was made by integrating a high- HfLaO gate dielectric and an amorphous-InGaZnO (a-IGZO) active layer on a polyimide substrate. This flexible HfLaO/a-IGZO TFT exhibits a low threshold voltage of 0.1 V, a small subthreshold swing of 0.18 V/dec, a high maximum saturation mobility of 22.1 cm2/V s, and an acceptable on/off current ratio of 2 × 10-5. The low threshold voltage and small subthreshold swing allow the device to operate at 1.5 V for low-power applications, which should enable significant future progress in energy efficiency.
Keywords :
flexible electronics; hafnium compounds; indium compounds; thin film transistors; HfLaO; HfLaO gate dielectric; InGaZnO; amorphous-InGaZnO active layer; flexible thin-film transistor; low-voltage-driven flexible InGaZnO thin-film transistor; maximum saturation mobility; polyimide substrate; small subthreshold swing; Flexible thin-film transistors (TFTs); HfLaO; InGaZnO (IGZO); high- $kappa$;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2010.2047232
