DocumentCode :
1485549
Title :
Total internal reflection switching in electrooptically addressable domain-engineered LiNbO3
Author :
Boyland, A.J. ; Ross, G.W. ; Mailis, S. ; Smith, P.G.R. ; Eason, R.W.
Author_Institution :
Optoelectron. Res. Centre, Southampton Univ., UK
Volume :
37
Issue :
9
fYear :
2001
fDate :
4/26/2001 12:00:00 AM
Firstpage :
585
Lastpage :
587
Abstract :
The authors demonstrate a novel electro-optically addressable switch that uses electric-field controllable total internal reflection at an interface between two anti-parallel domains fabricated in single crystal LiNbO3. With an applied field, the induced index change at the interface is sufficient to switch the beam from transmission to reflection with a contrast ratio exceeding 20 dB in current samples
Keywords :
electric domains; electro-optical switches; light reflection; lithium compounds; photorefractive materials; refractive index; LiNbO3; anti-parallel domain interfaces; applied field; contrast ratio; domain-engineered; electric-field controllable total internal reflection; electro-optically addressable switch; electrooptically addressable; induced index change; optical switches; reflection beam; single crystal LiNbO3; total internal reflection switching; transmission beam;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el.20010404
Filename :
920930
Link To Document :
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