25-W CW high-brightness tapered semiconductor laser-array

Author

Mikulla, M. ; Schmitt, A. ; Walther, M. ; Kiefer, R. ; Pletschen, W. ; Braunstein, J. ; Weimann, G.

Author_Institution

Fraunhofer-Inst. fur Angewandte Festkorperphys., Freiburg, Germany

Volume

11

Issue

4

fYear

1999

fDate

4/1/1999 12:00:00 AM

Firstpage

412

Lastpage

414

Abstract

High-power high-brightness laser diode arrays comprising 25 tapered laser oscillators have been fabricated. The devices, based on recently developed low-modal gain epitaxial layer-structures, deliver a maximum output power of more than 25-W continuous-wave. A high beam quality uniformity is achieved with an average beam quality factor of M/sup 2/=2.6 for each individual emitter. Compared to conventional broad-area laser diode arrays the brightness of each emitter is improved by more than an order of magnitude in the slow-axis direction. These arrays have the potential to produce optical power densities as high as 1 MW/cm/sup 2/.

Keywords

III-V semiconductors; aluminium compounds; brightness; gallium arsenide; indium compounds; laser beams; laser modes; optical fabrication; quantum well lasers; semiconductor laser arrays; 25 W; CW high-brightness tapered semiconductor laser-array; CW lasers; InAlGaAs; InAlGaAs QW laser array; average beam quality factor; brightness; broad-area laser diode arrays; continuous-wave lasers; high beam quality uniformity; high-power high-brightness laser diode arrays; individual emitter; low-modal gain epitaxial layer-structures; maximum output power; optical power densities; slow-axis direction; Brightness; Diode lasers; Laser beams; Molecular beam epitaxial growth; Optical arrays; Oscillators; Power generation; Q factor; Semiconductor laser arrays; Semiconductor lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.752532

Filename

752532