Title :
Practical Considerations Relating to Immersion Cooling of Power Electronics in Traction Systems
Author :
Barnes, Cindy M. ; Tuma, Phillip E.
Author_Institution :
Markets Mater. Div., 3M Electron., St. Paul, MN, USA
Abstract :
Junction-to-fluid thermal resistivities R´´jf, of two dual-side-soldered insulated gate bipolar transistor (IGBT) modules immersion cooled in a hydrofluoroether C3F7OCH3 liquid were measured experimentally. R´´jf = 0.040°C·cm2/W for 0.144 cm2 die at a peak heat flux of 1180 W/cm2 and 55 A, and 0.11 °C· cm2/W for 1.46 cm2 die at a peak heat flux of 550 W/cm2 and 305 A. A technique for automatic in situ degassing that would reduce manufacturing cost and permit field servicing of immersion systems that reach subambient pressure when idle showed fluid loss rates of 0.3 g per 100 cm3 of air vented, roughly 1/100th that expected from an HFC-134a air conditioning system with a similar leak. Experiments to quantify packaging density and fluid requirements suggest that 100 cm3 of fluid is required to dissipate 1 kW and packaging density is limited only by the electrical bus geometry.
Keywords :
insulated gate bipolar transistors; power bipolar transistors; power electronics; traction power supplies; HFC-134a air conditioning system; automatic in situ degassing; current 305 A; current 55 A; electrical bus geometry; hydrofluoroether liquid; immersion cooling; immersion systems; insulated gate bipolar transistor; junction-to-fluid thermal resistivities; manufacturing cost; packaging density; power 1 kW; power electronics; temperature 0.11 C; traction systems; Air conditioning; Conductivity; Costs; Dielectric liquids; Immersion cooling; Insulated gate bipolar transistors; Manufacturing automation; Packaging; Power electronics; Thermal resistance; Cooling; degassing; fluoroketone (FK); immersion; two-phase;
Journal_Title :
Power Electronics, IEEE Transactions on
DOI :
10.1109/TPEL.2010.2049864