• DocumentCode
    1485567
  • Title

    Silicon Crystal Growth and Wafer Technologies

  • Author

    Fisher, Graham ; Seacrist, Michael R. ; Standley, Robert W.

  • Author_Institution
    MEMC Electron. Mater. Inc., St. Peters, MO, USA
  • Volume
    100
  • fYear
    2012
  • Firstpage
    1454
  • Lastpage
    1474
  • Abstract
    Silicon substrates form the foundation of modern microelectronics. Whereas the first 50 years of silicon wafer technology were primarily driven by the microelectronics industry, applications in photovoltaics (PV) also promise to drive new advances in silicon wafer technology over the next ten years. In the first part, we review the historical development of semiconductor silicon wafer technology and highlight recent technical advances in bulk crystal growth and wafering technologies, including the development of silicon-on-insulator (SOI) technologies and ultrathin wafers. We then discuss technologies that could take us beyond the current capabilities of complementary metal-oxide-semiconductor (CMOS) devices. In the second part, we review silicon manufacturing for PV applications and some unique wafering technology challenges in that field. Finally, we summarize industry roadmaps and product needs highlighting key technical areas which promise to shape the future of silicon wafer technologies in the coming decades.
  • Keywords
    CMOS integrated circuits; crystal growth; elemental semiconductors; silicon; solar cells; CMOS devices; SOI technology; Si; complementary metal-oxide-semiconductor devices; microelectronics industry; photovoltaic cells; semiconductor silicon wafer technology; silicon crystal growth; silicon manufacturing; silicon-on-insulator; ultrathin wafers; Crystals; Large scale integration; Photovoltaic systems; Semiconductor device measurement; Silicon; Substrates; Transistors; Wafer scale integration; Photovoltaics (PV); semiconductor materials; silicon; substrates;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/JPROC.2012.2189786
  • Filename
    6178756