Title :
C-V and G-V characterisation of Ga2O3(Gd2O3)/GaN capacitor with low interface state density
Author :
Lay, T.S. ; Liu, W.D. ; Hong, M. ; Kwo, J. ; Mannaerts, J.P.
Author_Institution :
Inst. of Electro.-Opt. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan
fDate :
4/26/2001 12:00:00 AM
Abstract :
An MOS capacitor formed by electron-beam deposition of Ga2 O3(Gd2O3) on GaN has been characterised by C-V and G-V measurements at high AC frequencies of 1000, 100 and 10 KHz. An accurate C-V relation has been obtained consistently by using a model that includes both series and shunt parasitic resistances. The results indicate a fixed oxide charge density of ~3.0×1011 cm-2. and a minimum interface state density of ~4.2×1011 cm-2 at the Ga 2O3(Gd2O3)/GaN interface
Keywords :
III-V semiconductors; MOS capacitors; capacitance; electron beam deposition; gadolinium; gallium compounds; interface states; wide band gap semiconductors; 10 to 1000 kHz; C-V characterisation; G-V characterisation; Ga2O3(Gd2O3)/GaN capacitor; Ga2O3:Gd-GaN; GaN; MOS capacitor; electron-beam deposition; fixed oxide charge density; high AC frequencies; low interface state density; minimum interface state density; model; series resistance; shunt parasitic resistance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010403
