High power density of AlGaAs/InGaAs doped-channel FETs with low DC power supply

Author

Chiu, H.C. ; Yang, S.C. ; Chien, F.-T. ; Chan, Y.-J.

Author_Institution

Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan

Volume

37

Issue

9

fYear

2001

fDate

4/26/2001 12:00:00 AM

Firstpage

597

Lastpage

598

Abstract

High power density Al_0.3Ga_0.7As/In_0.15Ga_0.85As doped-channel FETs (modified DCFETs) biased at 3 V for 2.4 GHz wireless communication applications are proposed. A planar Si δ-doped layer is inserted inside the wide-bandgap undoped AlGaAs layer to reduce parasitic resistances and enhance the device microwave power performance. The modified DCFETs (M-DCFETs) exhibit an output power density of 302 mW/mm, a power-added efficiency of 52%, and a linear power gain of 19 dB under 2.4 GHz operation for a 1 mm gate-width device. These characteristics suggest that doped-channel FETs with a planar Si δ-doped layer can be used in high linearity and high power microwave device applications

Keywords

III-V semiconductors; UHF field effect transistors; aluminium compounds; gallium arsenide; indium compounds; microwave field effect transistors; microwave power transistors; power field effect transistors; semiconductor device measurement; semiconductor doping; 1 mm; 19 dB; 2.4 GHz; 2.4 GHz wireless communication applications; 3 V; 52 percent; Al_0.3Ga_0.7As-In_0.15Ga_0.85As; high linearity high power microwave device applications; high power density Al_0.3Ga_0.7As/In_0.15Ga_0.85As doped-channel FETs; linear power gain; low DC power supply; microwave power performance; modified DCFETs; output power density; parasitic resistance; planar Si δ-doped layer; power-added efficiency; wide-bandgap undoped AlGaAs layer;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20010399

Filename

920939