DocumentCode :
1485642
Title :
Diffusion of Water Molecules in Amorphous Silica
Author :
Kostinski, Sarah ; Pandey, Ravindra ; Gowtham, S. ; Pernisz, Udo ; Kostinski, Alexander
Author_Institution :
Harvard Univ., Cambridge, MA, USA
Volume :
33
Issue :
6
fYear :
2012
fDate :
6/1/2012 12:00:00 AM
Firstpage :
863
Lastpage :
865
Abstract :
The diffusive penetration of atmospheric water vapor into amorphous silica (a-SiO2) degrades the performance of electronic devices. In this letter, we calculate the range of activation energies for water diffusion in a-SiO2 such that the diffusion time through, for example, a 0.5-m protective layer is on the order of the decadal time scale, as required in typical applications. We find that for all practical purposes, silica composed of n -member rings is impenetrable to water vapor for n ≤ 5 . Thus, we conclude that the distribution of n-member rings in a-SiO2 and, specifically, the n >; 5 fraction is the critical parameter for predicting device performance.
Keywords :
diffusion; activation energies; amorphous silica; atmospheric water vapor; electronic devices; water diffusion; water molecules; Glass; Performance evaluation; Potential energy; Silicon; Silicon carbide; Temperature sensors; Amorphous silica ($hbox{a-SiO}_{2}$); diffusion; thin film; water vapor;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2012.2189750
Filename :
6178766
Link To Document :
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