DocumentCode
1485642
Title
Diffusion of Water Molecules in Amorphous Silica
Author
Kostinski, Sarah ; Pandey, Ravindra ; Gowtham, S. ; Pernisz, Udo ; Kostinski, Alexander
Author_Institution
Harvard Univ., Cambridge, MA, USA
Volume
33
Issue
6
fYear
2012
fDate
6/1/2012 12:00:00 AM
Firstpage
863
Lastpage
865
Abstract
The diffusive penetration of atmospheric water vapor into amorphous silica (a-SiO2) degrades the performance of electronic devices. In this letter, we calculate the range of activation energies for water diffusion in a-SiO2 such that the diffusion time through, for example, a 0.5-m protective layer is on the order of the decadal time scale, as required in typical applications. We find that for all practical purposes, silica composed of n -member rings is impenetrable to water vapor for n ≤ 5 . Thus, we conclude that the distribution of n-member rings in a-SiO2 and, specifically, the n >; 5 fraction is the critical parameter for predicting device performance.
Keywords
diffusion; activation energies; amorphous silica; atmospheric water vapor; electronic devices; water diffusion; water molecules; Glass; Performance evaluation; Potential energy; Silicon; Silicon carbide; Temperature sensors; Amorphous silica ($hbox{a-SiO}_{2}$ ); diffusion; thin film; water vapor;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2012.2189750
Filename
6178766
Link To Document