• DocumentCode
    1485642
  • Title

    Diffusion of Water Molecules in Amorphous Silica

  • Author

    Kostinski, Sarah ; Pandey, Ravindra ; Gowtham, S. ; Pernisz, Udo ; Kostinski, Alexander

  • Author_Institution
    Harvard Univ., Cambridge, MA, USA
  • Volume
    33
  • Issue
    6
  • fYear
    2012
  • fDate
    6/1/2012 12:00:00 AM
  • Firstpage
    863
  • Lastpage
    865
  • Abstract
    The diffusive penetration of atmospheric water vapor into amorphous silica (a-SiO2) degrades the performance of electronic devices. In this letter, we calculate the range of activation energies for water diffusion in a-SiO2 such that the diffusion time through, for example, a 0.5-m protective layer is on the order of the decadal time scale, as required in typical applications. We find that for all practical purposes, silica composed of n -member rings is impenetrable to water vapor for n ≤ 5 . Thus, we conclude that the distribution of n-member rings in a-SiO2 and, specifically, the n >; 5 fraction is the critical parameter for predicting device performance.
  • Keywords
    diffusion; activation energies; amorphous silica; atmospheric water vapor; electronic devices; water diffusion; water molecules; Glass; Performance evaluation; Potential energy; Silicon; Silicon carbide; Temperature sensors; Amorphous silica ($hbox{a-SiO}_{2}$); diffusion; thin film; water vapor;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2012.2189750
  • Filename
    6178766