DocumentCode
1485702
Title
Generalised Butterworth-Van Dyke equivalent circuit for thin-film bulk acoustic resonator
Author
Jin, Hye-Jin ; Dong, S.R. ; Luo, Jack K. ; Milne, W.I.
Author_Institution
Dept. of Inf. Sci. & Electron. Eng., Zhejiang Univ., Hangzhou, China
Volume
47
Issue
7
fYear
2011
Firstpage
424
Lastpage
426
Abstract
A generalised Butterworth-Van Dyke (GBVD) equivalent circuit model for a thin-film bulk acoustic resonator (FBAR), especially for a FBAR with a high electromechanical coupling constant (kt2), is presented. The derivation starts from the ideal impedance formula for the FBAR, then acoustic loss, dielectric loss, and electrode electrical loss are introduced step by step. Results show that the widely used modified Butterworth-Van Dyke (MBVD) model is a special case of a GBVD model using a low kt2 approximation.
Keywords
acoustic resonators; bulk acoustic wave devices; dielectric losses; equivalent circuits; thin film devices; acoustic loss; dielectric loss; electrode electrical loss; electromechanical coupling constant; generalised Butterworth-Van Dyke equivalent circuit; thin-film bulk acoustic resonator;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el.2011.0343
Filename
5741018
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