Title :
Enhanced prediction of GaN MISHEMT RF power performance using improved large-signal model
Author_Institution :
Sch. of Electron. Eng., Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
An empirical large-signal model for a high-power AlGaN/GaN metal-insulator-semiconductor HEMT (GaN MISHEMT) utilising improved drain current (I-V) and gate charge (Q-V) formulation is presented. The proposed modelling equations accurately model the asymmetric bell-shaped transconductance (Gm) and gate capacitance (C11) characteristics over a wide bias range of operation. The simulation results of RF large-signal harmonic power levels and two-tone intermodulation distortion products show excellent agreement with the measured data.
Keywords :
III-V semiconductors; MIS devices; aluminium compounds; gallium compounds; high electron mobility transistors; intermodulation distortion; wide band gap semiconductors; MISHEMT RF power performance; RF large-signal harmonic power levels; asymmetric bell-shaped transconductance; enhanced prediction; gate capacitance characteristics; large-signal model; two-tone intermodulation distortion;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2010.3687
