Magnetotransconductance profiling of mobility and doping in GaAs MESFETs

Author

Kharabi, F. ; Decker, D. Richard

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Lehigh Univ., Bethlehem, PA, USA

Volume

11

Issue

4

fYear

1990

fDate

4/1/1990 12:00:00 AM

Firstpage

137

Lastpage

139

Abstract

Electron mobility profiles of GaAs MESFETs have been measured using the magnetotransconductance technique and corrected using in situ measurements of parasitic resistances. It is shown that with this technique both mobility and carrier density profiles versus depth can be calculated without C-V data. This enables complete mobility and carrier density profiles to be obtained on short-gate-length packaged devices without the inherent difficulties of the C-V method and its attendant inaccuracies near the active layer-substrate interface. The results for two commercial packaged devices at room temperature, which indicate mobilities of 3500 to 4500 cm/sup 2//V/s and peak carrier concentrations of 1.2 to 2.0*10/sup 17/ cm/sup -3/, are given.<>

Keywords

III-V semiconductors; Schottky gate field effect transistors; carrier mobility; doping profiles; gallium arsenide; semiconductor device testing; semiconductor doping; GaAs; III-V semiconductors; MESFETs; carrier density profiles; electron mobility profiling; in situ measurements; magnetotransconductance technique; parasitic resistances; short-gate-length packaged devices; Capacitance-voltage characteristics; Charge carrier density; Doping; Electrical resistance measurement; Gallium arsenide; Giant magnetoresistance; MESFETs; Magnetic field measurement; Packaging; Transconductance;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.61788

Filename

61788