Title :
Carrier induced magnetic interaction in the diluted magnetic semiconductor PbSnMnTe
Author :
de Jonge, W.J.M. ; Swagten, H.J.M. ; Galazka, R.R. ; Warmenbol, P. ; Devreese, J.T.
Author_Institution :
Dept. of Phys., Eindhoven Univ. of Technol., Netherlands
fDate :
11/1/1988 12:00:00 AM
Abstract :
Low-temperature AC susceptibility and specific heat measurements have been performed to study the influence of the concentration of charge carriers on the ferromagnetic phase transition of Pb1-x-y SnyMnxTe for various compositions (0.005⩽x⩽0.1, 0.4⩽y⩽1.0). A critical carrier density above which a ferromagnetic transition can take place is observed. This behavior is also reflected in the Curie-Weiss temperature Θ obtained from high-temperature susceptibility data. A simple modified RKKY mechanism for semiconductors is proposed in which carriers from two valence bands located in different regions of the Brillouin zone contribute. The effect of a finite mean free path of the carriers is taken into account. This model gives excellent agreement with the data is obtained without the use of a fitting parameter
Keywords :
carrier density; ferromagnetic-paramagnetic transitions; lead compounds; magnetic properties of dilute systems; magnetic semiconductors; magnetic susceptibility; manganese compounds; specific heat of solids; tin compounds; Brillouin zone; Curie-Weiss temperature; Pb1-x-ySnyMnxTe; RKKY mechanism; carrier induced ferromagnetism; carrier induced magnetic interaction; concentration of charge carriers; critical carrier density; diluted magnetic semiconductor; ferromagnetic phase transition; finite mean free path; high-temperature susceptibility data; low temperature AC susceptibility; model; specific heat measurements; valence bands; Charge carriers; Charge measurement; Current measurement; Magnetic properties; Magnetic semiconductors; Nearest neighbor searches; Performance evaluation; Phase measurement; Physics; Temperature;
Journal_Title :
Magnetics, IEEE Transactions on
