Single-domain model for pseudo spin valve MRAM cells

Author

Everitt, B.A. ; Pohm, A.V.

Author_Institution

Nonvolatile Electron. Inc., Eden Prairie, MN, USA

Volume

33

Issue

5

fYear

1997

fDate

9/1/1997 12:00:00 AM

Firstpage

3289

Lastpage

3291

Abstract

The dynamic behavior of pseudo spin valve memory cells fabricated from GMR sandwich material with magnetic layers of differing thickness has been studied using a single domain model. The model takes into account torques within each magnetic layer as well as magnetostatic coupling between layers. When dynamic effects are included, the model predicts that inadvertent writing of a bit may occur during a read operation when the word field is pulsed on very quickly. Ramping up the word field over a period of several ns or increasing the thickness differential between the magnetic layers is shown to diminish the likelihood of an unintentional write

Keywords

giant magnetoresistance; magnetic domains; magnetic film stores; magnetic multilayers; magnetic switching; magnetoresistive devices; modelling; random-access storage; spin dynamics; torque; GMR sandwich material; Landau-Lifshitz-Gilbert equation; dynamic behavior; inadvertent bit writing; magnetic layer thickness; magnetostatic coupling; pseudo spin valve MRAM cells; quasistatic approximation; single-domain model; thickness differential; torques; word field ramping; Couplings; Demagnetization; Magnetic anisotropy; Magnetic domains; Magnetic materials; Magnetic separation; Magnetization; Magnetostatics; Perpendicular magnetic anisotropy; Predictive models; Spin valves; Writing;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.617920

Filename

617920