Title :
Micromagnetic simulations of magnetoresistive behavior of sub-micrometer spin-valve MRAM devices
Author :
Oti, John O. ; Russek, Stephen E.
Author_Institution :
Div. of Electromagn. Technol., Nat. Inst. of Stand. & Technol., Boulder, CO, USA
fDate :
9/1/1997 12:00:00 AM
Abstract :
The effects of device shape and size on the giant magnetoresistive (MR) response of NiFe7.5 nm/Co0.6 nm/Cu3 nm /Co0.6 nm/NiFe7.5 nm/FeMn spin-valve magnetoresistive random access memory (MRAM) stripes are studied by micromagnetic simulation. Samples having aspect ratios of 10:1, 3:1 and 1.5:1, and line widths varying from 0.5 μm to 1.5 μm are simulated. The effects of the magnetostatic coupling between the magnetic layers and their self-demagnetization are studied
Keywords :
Barkhausen effect; demagnetisation; giant magnetoresistance; magnetic film stores; magnetic multilayers; magnetic switching; magnetoresistive devices; random-access storage; simulation; 0.5 to 1.5 mum; Barkhausen noise; NiFe-Co-Cu-Co-NiFe-FeMn; aspect ratios; giant magnetoresistive response; line widths; magnetoresistive behavior; magnetostatic coupling; micromagnetic simulation; self-demagnetization; spin-valve MRAM stripes; sub-micrometer spin-valve MRAM devices; switching; Couplings; Giant magnetoresistance; Magnetic anisotropy; Magnetic films; Magnetic moments; Magnetization; Magnetoresistance; Magnetostatics; Micromagnetics; Perpendicular magnetic anisotropy; Random access memory; Sandwich structures; Shape; Spin valves;
Journal_Title :
Magnetics, IEEE Transactions on
