Title :
Effect of crystalline anisotropy in AMRAM cells
Author :
Gadbois, J. ; Zhu, J.G. ; Vavra, W. ; Hurst, A.
Author_Institution :
Dept. of Electr. Eng., Minnesota Univ., Minneapolis, MN, USA
fDate :
9/1/1997 12:00:00 AM
Abstract :
The effect of crystalline anisotropy on the device signal and edge switching thresholds of both NiFeCo and NiFe anisotropic magnetoresistive random access memory (AMRAM) cells has been simulated. The NiFe device demonstrated a greater signal range with an edge switching threshold of 5 Oe, while the NiFeCo device showed a smaller range of signal but with an edge switching threshold of 13 Oe
Keywords :
cobalt alloys; iron alloys; magnetic anisotropy; magnetic storage; magnetoresistive devices; nickel alloys; random-access storage; AMRAM cell; NiFe; NiFeCo; anisotropic magnetoresistive random access memory; crystalline anisotropy; edge switching threshold; signal range; Anisotropic magnetoresistance; Computational modeling; Conducting materials; Crystallization; Magnetic anisotropy; Magnetic domains; Magnetic materials; Magnetic switching; Magnetostatics; Perpendicular magnetic anisotropy; Random access memory; Saturation magnetization;
Journal_Title :
Magnetics, IEEE Transactions on
