Title :
Three Operation Modes for Tb/s All-Optical Switching With Intersubband Transitions in InGaAs/AlAs/AlAsSb Quantum Wells
Author :
Fedoryshyn, Yuriy ; Ma, Ping ; Faist, Jérôme ; Kaspar, Peter ; Kappeler, Roman ; Beck, Mattias ; Holzman, Jonathan F. ; Jäckel, Heinz
Author_Institution :
Electron. Lab., ETH Zurich, Zürich, Switzerland
fDate :
7/1/2012 12:00:00 AM
Abstract :
We report on ultra-fast intersubband transitions in strained coupled double InGaAs/AlAs/AlAsSb quantum wells in terms of modeling, fabrication, and characterization of the structures. Our experimental results demonstrate the capability of the studied structures to perform Tb/s all-optical switching in the telecommunication wavelength range employing exclusively intersubband transitions. The coupled double quantum wells embedded into a ridge-waveguide can be explored as an inline single-wavelength all-optical switch at 1430 or 1730 nm, with response times of 400 fs and 2 ps, respectively. These structures can also be operated in a dual-wavelength mode, which allows a straightforward separation of signal pulses at 1730 nm from control pulses at 1430 nm by relaxed spectral filtering at the output of the device.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high-speed optical techniques; indium compounds; optical control; optical fabrication; optical filters; optical switches; optical waveguides; ridge waveguides; semiconductor device models; semiconductor quantum wells; InGaAs-AlAs-AlAsSb; Quantum Wells; Tb/s all-optical switching; control pulses; dual-wavelength mode; embedded ridge-waveguide; inline single-wavelength all-optical switch; operation modes; optical fabrication; relaxed spectral filtering; response times; signal pulse separation; strained coupled double quantum wells; telecommunication wavelength; ultrafast intersubband transitions; wavelength 1430 nm; wavelength 1730 nm; Absorption; Indium gallium arsenide; Optical switches; Optical waveguides; Probes; Wavelength measurement; All-optical switching; intersubband transitions; quantum wells; ridge waveguides;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2012.2193558