• DocumentCode
    1487259
  • Title

    Photocurrent Enhancement of Copper (II) Phthalocyanine on Nanogap Thin Film Electrodes

  • Author

    Hu, Bing ; Hinds, Bruce J.

  • Author_Institution
    MicroChip Technol., Chandler, AZ, USA
  • Volume
    11
  • Issue
    6
  • fYear
    2012
  • Firstpage
    1073
  • Lastpage
    1079
  • Abstract
    Photovoltaic efficiency of organic semiconductors can be improved when the electrode separation distance is below the carrier recombination length. Nanogap electrodes formed by Au/Al2O3/Au tunnel junctions were used to study photovoltaic characteristics of Copper (II) phthalocyanine (CuPc) for electrode spacing distance within a 10 nm scale. A large photocurrent enhancement over 50 times that of bulk CuPc film was observed when the electrode gap distance approached 10 nm. CuPc carrier recombination length is seen to be 10 nm, in our evaporation deposited materials, close to its exciton diffusion length in the literature reports. All devices show diode I-V properties due to a large Schotteky barrier contact resistance between the small top Au electrode and CuPc film.
  • Keywords
    Schottky barriers; contact resistance; copper compounds; electrodes; electron-hole recombination; excitons; organic semiconductors; organometallic compounds; photoconductivity; photoemission; photovoltaic effects; semiconductor thin films; Au electrode; Au-Al2O3-Au; Schotteky barrier contact resistance; bulk copper (II) phthalocyanine film; copper (II) phthalocyanine carrier recombination length; diode I-V properties; electrode gap distance; electrode separation distance; electrode spacing distance; evaporation deposited materials; exciton diffusion length; nanogap thin film electrodes; organic semiconductors; photocurrent enhancement; photovoltaic characteristics; photovoltaic efficiency; tunnel junctions; Aluminum oxide; Contact resistance; Electrodes; Films; Gold; Photoconductivity; Radiative recombination; Nanocontacts; nanofabrication; organic semiconductors; photodetectors; tunneling;
  • fLanguage
    English
  • Journal_Title
    Nanotechnology, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1536-125X
  • Type

    jour

  • DOI
    10.1109/TNANO.2012.2193595
  • Filename
    6179335