A new temporary bonding technology with spin-on glass and hydrogenated amorphous Si for 3D LSIs

Author

Hashiguchi, Hironori ; Fukushima, Tetsuya ; Kino, Hitoshi ; Lee, Ki-Won ; Tanaka, T. ; Koyanagi, Mitsumasa

Author_Institution

Grad. Sch. of Eng., Tohoku Univ., Sendai, Japan

fYear

2014

fDate

23-25 April 2014

Firstpage

74

Lastpage

77

Abstract

A new temporary bonding technology has been demonstrated, where both spin-on glass (SOG) and hydrogenated amorphous silicon (a-Si:H) were used as a bonding layer and as a debonding layer, respectively. Square chips were bonded to a glass wafer through the SOG layer and a-Si:H layer. The SOG bonding was capable of withstanding chip thinning and high-temperature chemical vapor deposition (CVD) processes. A XeCl excimer laser was irradiated to the a-Si:H layer through the glass wafers for debonding the chips. A novel via-last/backside-via 3D integration process using temporary SOG bonding was also proposed for advanced multichip-to-wafer 3D integration with self-assembly.

Keywords

amorphous semiconductors; bonding processes; elemental semiconductors; excimer lasers; large scale integration; self-assembly; silicon; wafer bonding; xenon compounds; 3D LSI; CVD; SOG; Si:H; XeCl; XeCl excimer laser; chip thinning; debonding layer; glass wafer; high-temperature chemical vapor deposition; hydrogenated amorphous silicon; multichip-to-wafer 3D integration; self-assembly; spin-on glass; square chips; temporary bonding technology; via-last-backside-via 3D integration process; Bonding; Chemicals; Glass; Plasma temperature; Silicon; Three-dimensional displays; 3D Integration; Chip on Wafer; Temporary Bonding/De-Bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics Packaging (ICEP), 2014 International Conference on

Conference_Location

Toyama

Print_ISBN

978-4-904090-10-7

Type

conf

DOI

10.1109/ICEP.2014.6826664

Filename

6826664