DocumentCode :
1487387
Title :
Radiation from planar resonators
Author :
Schwarz, S.E. ; Prouty, Mark D. ; Mei, Kenneth K.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Volume :
39
Issue :
3
fYear :
1991
fDate :
3/1/1991 12:00:00 AM
Firstpage :
521
Lastpage :
525
Abstract :
Power radiated from microstrip-based resonators is calculated by integration of a Green´s function with assumed currents, a method that is convenient and is thought to be more accurate than previous methods used in calculations of radiation Q. Resonators consisting of two coupled microstrips excited in the odd mode are found to radiate much less than conventional single-microstrip resonators or U-shaped hairpin resonators. However, when the resonator is loaded by a semiconductor device, as in an oscillator, radiation increases. Asymmetries in the resonators, arising from output coupling or fabrication errors, introduce even-symmetric currents which radiate much more strongly than odd-mode currents. The effects of such asymmetries on radiated power are estimated. On the basis of these findings, a convenient geometry for high-power planar oscillators with low radiation is proposed
Keywords :
Green´s function methods; losses; resonators; strip line components; Green´s function; coupled microstrips; even-symmetric currents; high-power planar oscillators; microstrip-based resonators; odd-mode currents; planar resonators; radiated power; radiation loss; semiconductor device load; Coupling circuits; Current distribution; Fabrication; Geometry; Local oscillators; Microstrip resonators; Microwave oscillators; Microwave technology; Semiconductor devices; Substrates;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/22.75295
Filename :
75295
Link To Document :
بازگشت