• DocumentCode
    1487391
  • Title

    Geant4 Analysis of n-Si Nuclear Reactions From Different Sources of Neutrons and Its Implication on Soft-Error Rate

  • Author

    Serre, S. ; Semikh, S. ; Uznanski, S. ; Autran, J.L. ; Munteanu, D. ; Gasiot, G. ; Roche, P.

  • Author_Institution
    Aix-Marseille Univ. and CNRS, Institute of Materials, Microelectronics and Nanosciences of Provence (IM2NP, UMR CNRS 6242), Marseille Cedex, France
  • Volume
    59
  • Issue
    4
  • fYear
    2012
  • Firstpage
    714
  • Lastpage
    722
  • Abstract
    This work examines nuclear events resulting from the interaction of atmospheric neutrons at ground level and different atmospheric-like sources with a silicon layer. Using extensive Geant4 simulations and in-depth data analysis, this study provides a detailed comparison between several facilities and natural environment in terms of nuclear processes, secondary ion production and fragment energy distribution. The different computed databases have been used in a second part of this work to estimate the Soft-Error Rate (SER) of a widely characterized 65 nm SRAM test circuit with the Tool suIte for rAdiation Reliability Assessment (TIARA Monte-Carlo simulation code). A detailed analysis is conducted to clarify the mechanisms leading to single and multiple cell upsets and to estimate the SER of a broad spectrum source from values obtained with monoenergetic simulations.
  • Keywords
    Atmospheric modeling; Databases; Ions; Neutrons; Protons; Random access memory; Silicon; Cosmic-ray induced neutrons; Geant4; SRAM; multiple cell upset; neutron beam testing; single-event upset; soft-error rate; terrestrial neutron spectrum;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2012.2189018
  • Filename
    6179353