Title :
A folded extended window MOSFET for ULSI applications
Author :
Lu, Chih-Yuan ; Yaney, David S. ; Lee, K.H. ; Twiford, M.S. ; Tsai, Nun-Sian ; Kook, T. ; Fritzinger, L.B. ; Chen, Min-Liang ; Yang, T.S.
Author_Institution :
AT&T Bell Lab., Allentown, PA, USA
Abstract :
A novel, simple, and straightforward technology, FEWMNOS, for a high-packing-density LDD CMOS device, is described. A salicide polysilicon layer, termed a window pad, is used as a window etch stop, source/drain (S/D) diffusion source, and extra sublevel interconnection layer. The reductions in layout area in transistors and in many applications including memory and ASICs (application-specific integrated circuits) are significant.<>
Keywords :
CMOS integrated circuits; VLSI; insulated gate field effect transistors; ASICs; FEWMNOS; LDD CMOS device; ULSI applications; application-specific integrated circuits; diffusion source; extra sublevel interconnection layer; folded extended window MOSFET; high-packing-density; layout area; memory; salicide polysilicon layer; window etch stop; window pad; Application specific integrated circuits; CMOS process; Etching; Fabrication; Glass; Implants; Integrated circuit interconnections; MOSFET circuits; Silicides; Ultra large scale integration;
Journal_Title :
Electron Device Letters, IEEE
