Title :
60 GHz compact low noise amplifier in 65 nm CMOS
Author :
Kunze, J.W. ; Weyers, C. ; Mayr, Philipp ; Bilgic, A. ; Hausner, Jerry
Author_Institution :
Dept. of Electron. Eng. & Inf. Sci., Ruhr-Univ. Bochum, Bochum, Germany
Abstract :
A single-ended low noise amplifier in 65 nm CMOS for applications at 60 GHz is presented. Its measured gain and noise figure at the centre frequency of 57 GHz are 19.1 dB and 5.5 dB, respectively, and it provides wideband matching. Transistors in the design have an asymmetrically fingered layout which reduces parasitic capacitances while simultaneously allowing for higher channel current densities.
Keywords :
CMOS analogue integrated circuits; low noise amplifiers; CMOS; asymmetrically fingered layout; current densities; frequency 57 GHz; frequency 60 GHz; single-ended low noise amplifier; wideband matching;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2009.0518
