Title :
SiGe MMIC power amplifier with on-chip lineariser for X-band applications
Author :
Kim, Hak S. ; Kim, K.Y. ; Kim, Woo Young ; Noh, Y.S. ; Yom, I.B. ; Oh, Inn Yeal ; Park, C.S.
Author_Institution :
Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea
Abstract :
An X-band linear power amplifier with an on-chip lineariser is developed using a 0.25 mum SiGe HBT BiCMOS process. The proposed on-chip lineariser improves the 1 dB compression to as much as 3.4 dB with no additional DC power consumption. Under a 3.3 V DC power supply, the single-stage cascode amplifier shows a measured small-signal gain of 12.2 dB and output PI dB of 20.8 dBm, with power added efficiency of 27.4% at the operating frequency range 8.5-10.5 GHz.
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; MMIC power amplifiers; bipolar transistor circuits; heterojunction bipolar transistors; DC power consumption; DC power supply; HBT BiCMOS process; MMIC power amplifier; Si-Ge; X-band linear power amplifier; frequency 8.5 GHz to 10.5 GHz; on-chip lineariser; power added efficiency; single-stage cascode amplifier; size 0.25 mum; voltage 3.3 V;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2009.1973
