Modeling the High-Frequency Degradation of Phase/Frequency Detectors

Author

Chen, Roger Yubtzuan ; Yang, Zong-Yi

Author_Institution

Dept. of Electron. Eng., Nat. Yunlin Univ. of Sci. & Technol., Doulio, Taiwan

Volume

57

Issue

5

fYear

2010

fDate

5/1/2010 12:00:00 AM

Firstpage

394

Lastpage

398

Abstract

The gain of a widely used sequential-type phase/frequency detector (PFD) as a function of its input frequency is modeled adopting a continuous-time approximation. High-frequency gain degradation is described by a frequency-dependent attenuation factor characterized in terms of the propagation delays of the PFD. The attenuation factor can be readily included in the dynamics equations of phase-locked loop to account for the effect of the PFD degradation. Gain-modeling-related delay components of a complimentary metal-oxide-semiconductor PFD are also described. The high-frequency model is in good agreement with the simulation results of the PFD.

Keywords

CMOS integrated circuits; approximation theory; phase detectors; phase locked loops; complimentary metal-oxide-semiconductor PFD; continuous-time approximation; frequency-dependent attenuation factor; gain-modeling-related delay components; high-frequency gain degradation modelling; phase-locked loop; propagation delays; sequential-type phase-frequency detector; D-type flip-flops (DFFs); modeling; phase-locked loops (PLLs); phase/frequency detectors (PFDs);

fLanguage

English

Journal_Title

Circuits and Systems II: Express Briefs, IEEE Transactions on

Publisher

ieee

ISSN

1549-7747

Type

jour

DOI

10.1109/TCSII.2010.2047327

Filename

5462921