DocumentCode :
1487864
Title :
Modeling the High-Frequency Degradation of Phase/Frequency Detectors
Author :
Chen, Roger Yubtzuan ; Yang, Zong-Yi
Author_Institution :
Dept. of Electron. Eng., Nat. Yunlin Univ. of Sci. & Technol., Doulio, Taiwan
Volume :
57
Issue :
5
fYear :
2010
fDate :
5/1/2010 12:00:00 AM
Firstpage :
394
Lastpage :
398
Abstract :
The gain of a widely used sequential-type phase/frequency detector (PFD) as a function of its input frequency is modeled adopting a continuous-time approximation. High-frequency gain degradation is described by a frequency-dependent attenuation factor characterized in terms of the propagation delays of the PFD. The attenuation factor can be readily included in the dynamics equations of phase-locked loop to account for the effect of the PFD degradation. Gain-modeling-related delay components of a complimentary metal-oxide-semiconductor PFD are also described. The high-frequency model is in good agreement with the simulation results of the PFD.
Keywords :
CMOS integrated circuits; approximation theory; phase detectors; phase locked loops; complimentary metal-oxide-semiconductor PFD; continuous-time approximation; frequency-dependent attenuation factor; gain-modeling-related delay components; high-frequency gain degradation modelling; phase-locked loop; propagation delays; sequential-type phase-frequency detector; D-type flip-flops (DFFs); modeling; phase-locked loops (PLLs); phase/frequency detectors (PFDs);
fLanguage :
English
Journal_Title :
Circuits and Systems II: Express Briefs, IEEE Transactions on
Publisher :
ieee
ISSN :
1549-7747
Type :
jour
DOI :
10.1109/TCSII.2010.2047327
Filename :
5462921
Link To Document :
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