Differential displacement kerma cross sections for neutron interactions in Si and GaAs

Author

Ougouag, A.M. ; Williams, J.G. ; Danjaji, M.B. ; Yang, S.Y. ; Meason, J.L.

Author_Institution

Illinois Univ., Urbana, IL, USA

Volume

37

Issue

6

fYear

1990

fDate

12/1/1990 12:00:00 AM

Firstpage

2219

Lastpage

2228

Abstract

The cross-section processing code NJOY has been modified to calculate flux-averaged partially integrated differential displacement kerma cross sections or displacement kerma matrix elements for neutron interactions. These, along with total displacement kerma cross sections, have been calculated using ENDF/B-V and ENDL-84 data files for Si, Ga, and As. These displacement kerma matrices for Si and GaAs allow calculations of the distribution of displacement energy between displacement cascades. The tabulation of kerma cross sections for Si constitutes a complete revision of the data used in current standard practices. Another contribution is the tabulated kerma cross sections for GaAs.

Keywords

III-V semiconductors; elemental semiconductors; energy loss of particles; gallium arsenide; neutron effects; physics computing; silicon; GaAs; NJOY; Si; differential displacement kerma cross sections; displacement energy; displacement kerma matrix elements; neutron interactions; semiconductor; total displacement kerma cross sections; Annealing; Gallium arsenide; Gold; Inductors; Kirk field collapse effect; Laboratories; Missiles; Neutrons; Niobium; Particle tracking;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.1990.574218

Filename

574218