• DocumentCode
    1487949
  • Title

    Total Dose-induced Charge Buildup In Nitrided-oxide MOS Devices

  • Author

    Krantz, Richard J. ; Scarpulla, John ; Cable, James S.

  • Author_Institution
    Research and Engineering Consultants, Inc., Englewood, CO 80111.
  • Volume
    38
  • Issue
    6
  • fYear
    1991
  • fDate
    12/1/1991 12:00:00 AM
  • Firstpage
    1746
  • Lastpage
    1753
  • Keywords
    Charge measurement; Current measurement; Dielectric measurements; Length measurement; MOS devices; Permittivity measurement; Radiation hardening; Thickness measurement; Time measurement; Voltage;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1991.574224
  • Filename
    574224
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1487949