Title :
Cryogenic performance of a GaAs MMIC distributed amplifier
Author :
Moore, C.R. ; Trimble, W.C. ; Edwards, M.L. ; Sanderson, T.R.
Author_Institution :
Appl. Phys. Lab., Johns Hopkins Univ., Laurel, MD, USA
fDate :
3/1/1991 12:00:00 AM
Abstract :
A three-stage GaAs MMIC distributed amplifier chip which was specially packaged in a two-chip, six-stage amplifier for cryogenic operation from 1 to 10 GHz is discussed. When immersed in liquid nitrogen, a fourfold reduction in amplifier noise is observed over the 4-GHz to 8-GHz frequency range. The cryogenic amplifier package is described, and the test configuration is explained. The reduction in amplifier noise is in agreement with the generally observed scaling with ambient temperature (in Kelvin) for discrete GaAs FET amplifiers
Keywords :
III-V semiconductors; MMIC; cryogenics; electron device noise; field effect integrated circuits; gallium arsenide; microwave amplifiers; packaging; 1 to 10 GHz; GaAs; MMIC distributed amplifier; SHF; amplifier noise reduction; cryogenic amplifier package; cryogenic operation; liquid nitrogen; test configuration; three stage amplifier chip; Cryogenics; Distributed amplifiers; Frequency; Gallium arsenide; MMICs; Nitrogen; Noise reduction; Operational amplifiers; Packaging; Testing;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
