Title :
Design of an RF Transmit/Receive Switch Using LDMOSFETs With High Power Capability and Low Insertion Loss
Author :
Hu, Chih-Min ; Hung, Chung-Yu ; Chu, Chun-Hsueh ; Chang, Da-Chiang ; Huang, Chih-Fang ; Gong, Jeng ; Chen, Ching-Yu
Author_Institution :
Dept. of Electron. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
fDate :
6/1/2011 12:00:00 AM
Abstract :
This paper presents, for the first time, the study of the application of a lateral diffused metal-oxide-semiconductor field-effect transistor (LDMOSFET) in a common-gate configuration to radio-frequency (RF) transmit/receive (T/R) switching circuits. A single-pole double-throw (SPDT) 900-MHz T/R switch is implemented using 0.25-LDMOSFET foundry technology. Measured results show that our switching circuit can achieve a low insertion loss of 0.82 dB and a high power handling capability of 27 dBm. This result is promising in integrating power management integrated circuits, RF power amplifiers, and switching circuits in a single chip, based on LDMOSFET technology, to realize an RF transmit front-end system-on-chip solution.
Keywords :
UHF field effect transistors; UHF integrated circuits; UHF power amplifiers; field effect transistor switches; power integrated circuits; switching circuits; system-on-chip; LDMOSFET; RF power amplifier; RF transmit front-end system-on-chip solution; RF transmit-receive switch; SPDT; T-R switching circuit; common-gate configuration; frequency 900 MHz; high power handling capability; integrating power management integrated circuit; low insertion loss; module lateral diffused metal-oxide-semiconductor field- effect transistor; radio-frequency; single-pole double-throw; size 0.25 mum; Logic gates; Radio frequency; Silicon; Substrates; Switches; Switching circuits; Transistors; Lateral diffused metal–oxide–semiconductor (LDMOS); radio-frequency (RF) switches;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2011.2127481
