• DocumentCode
    1488485
  • Title

    Equivalent-Circuit Modeling of Nonradiative Surface Plasmon Energy Transfer Along the Metallic Nanowire

  • Author

    Song, Kyungjun ; Mazumder, Pinaki

  • Author_Institution
    Univ. of Michigan, Ann Arbor, MI, USA
  • Volume
    10
  • Issue
    1
  • fYear
    2011
  • Firstpage
    111
  • Lastpage
    120
  • Abstract
    An analytical methodology for establishing an equivalent-circuit network of nonradiative surface plasmon (SP) energy transport along the metallic nanowire (MNW) is presented. To find out the passive elements for MNW, the SP dispersion and damping relation through modified Bessel function electromagnetic (EM) field expansion was derived, thus demonstrating the low-pas transmission-line (TL) model. Specifically, the low-pass TL parameters, such as series impedance (Z) and shunt admittance ( Y) can be calculated based on the lumped-element model and harmonic-voltage (current) distribution. Furthermore, the equivalent-circuit parameters, such as resistance (R), inductance (L), capacitance (C) and conductance (G), are obtained by employing the finite difference (FD) discretization method such as T-cell RLCG networks. These equivalent-circuit elements can be verified by the HSPICE circuit simulation and 3-D scattered finite-difference time-domain (FDTD) method. Finally, the parallel MNWs are modeled as equivalent-circuit networks by using the electrostatic coupling.
  • Keywords
    Bessel functions; damping; electric admittance; electric resistance; equivalent circuits; finite difference time-domain analysis; nanowires; surface plasmons; 3-D scattered finite-difference time-domain method; Bessel function electromagnetic field expansion; HSPICE circuit simulation; damping relation; electrostatic coupling; equivalent-circuit modeling; finite difference discretization method; harmonic-voltage distribution; low-pas transmission-line model; lumped-element model; metallic nanowire; nonradiative surface plasmon energy transfer; series impedance; shunt admittance; Finite-difference time-domain method (FDTD); T-cell discretization; low-pass transmission line (TL); metallic nanowire (MNW); mutual capacitance; surface plasmon (SP);
  • fLanguage
    English
  • Journal_Title
    Nanotechnology, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1536-125X
  • Type

    jour

  • DOI
    10.1109/TNANO.2009.2033114
  • Filename
    5272123