• DocumentCode
    1488560
  • Title

    Scale-Length Assessment of the Trigate Bulk MOSFET Design

  • Author

    Sun, Xin ; Liu, Tsu-Jae King

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Univ. of California at Berkeley, Berkeley, CA, USA
  • Volume
    56
  • Issue
    11
  • fYear
    2009
  • Firstpage
    2840
  • Lastpage
    2842
  • Abstract
    The scale length for trigate and planar ground-plane bulk MOSFETs is derived, and its sensitivity to device design parameters is investigated. The results indicate that the trigate bulk MOSFET is a more scalable design as compared with the planar ground-plane bulk MOSFET and the double-gate SOI MOSFET.
  • Keywords
    MOSFET; silicon-on-insulator; double-gate SOI MOSFET; planar ground-plane bulk MOSFET; scale-length assessment; trigate bulk MOSFET design; Boundary conditions; Doping profiles; FETs; Helium; MOSFET circuits; Poisson equations; Sun; MOSFET; multigate FET; scale length;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2009.2030711
  • Filename
    5272170
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1488560