Title :
Scale-Length Assessment of the Trigate Bulk MOSFET Design
Author :
Sun, Xin ; Liu, Tsu-Jae King
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of California at Berkeley, Berkeley, CA, USA
Abstract :
The scale length for trigate and planar ground-plane bulk MOSFETs is derived, and its sensitivity to device design parameters is investigated. The results indicate that the trigate bulk MOSFET is a more scalable design as compared with the planar ground-plane bulk MOSFET and the double-gate SOI MOSFET.
Keywords :
MOSFET; silicon-on-insulator; double-gate SOI MOSFET; planar ground-plane bulk MOSFET; scale-length assessment; trigate bulk MOSFET design; Boundary conditions; Doping profiles; FETs; Helium; MOSFET circuits; Poisson equations; Sun; MOSFET; multigate FET; scale length;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2009.2030711
