• DocumentCode
    1488589
  • Title

    Quantum Threshold Voltage Modeling of Short Channel Quad Gate Silicon Nanowire Transistor

  • Author

    Kumar, P. Rakesh ; Mahapatra, Santanu

  • Author_Institution
    Nanoscale Device Res. Lab., Indian Inst. of Sci., Bengaluru, India
  • Volume
    10
  • Issue
    1
  • fYear
    2011
  • Firstpage
    121
  • Lastpage
    128
  • Abstract
    In this paper, a physically based analytical quantum linear threshold voltage model for short channel quad gate MOSFETs is developed. The proposed model, which is suitable for circuit simulation, is based on the analytical solution of 3-D Poisson and 2-D Schrödinger equation. Proposed model is fully validated against the professional numerical device simulator for a wide range of device geometries and also used to analyze the effect of geometry variation on the threshold voltage.
  • Keywords
    MOSFET; Poisson equation; Schrodinger equation; circuit simulation; elemental semiconductors; nanowires; semiconductor device models; silicon; 2D Schrodinger equation; 3D Poisson equation; MOSFET; Si; circuit simulation; numerical device simulator; quantum threshold voltage modeling; short channel quad gate silicon nanowire transistor; CMOS; compact modeling; multigate transistors; quantum effects;
  • fLanguage
    English
  • Journal_Title
    Nanotechnology, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1536-125X
  • Type

    jour

  • DOI
    10.1109/TNANO.2009.2033380
  • Filename
    5272177
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1488589