Title :
High Peak Power, Narrow RF Linewidth Asymmetrical Cladding Quantum-Dash Mode-Locked Lasers
Author :
Faugeron, Michael ; Lelarge, F. ; Tran, M. ; Robert, Yannick ; Vinet, Eric ; Enard, A. ; Jacquet, Joel ; van Dijk, Frederic
Author_Institution :
III-V Lab., Alcatel-Thales, Palaiseau, France
Abstract :
In this paper, we report the development of an asymmetrical cladding single-section InAs/InP quantum-dash mode-locked laser (MLL). The asymmetrical cladding structure allows us to decrease the internal losses and to increase the optical eigenmode mode size. We have measured continuous-wave power superior to 400 mW and RF linewidth as narrow as 300 Hz for passive modelocking. We have compressed the optical signal using the dispersion of a single-mode fiber (SMF) and we have measured the delay between groups of optical modes for different SMF lengths. With the appropriate SMF length, we have obtained a quasi-null delay. In this configuration, subpicosecond pulses with 18 W peak power have been demonstrated for 10-GHz MLL. These performances demonstrate the potential of InAs/InP MLL for frequency comb generation up to tetahertz domain and high peak power optical pulse generation.
Keywords :
III-V semiconductors; indium compounds; laser mode locking; optical frequency conversion; optical pulse generation; quantum dash lasers; semiconductor lasers; InAs-InP; InAs-InP quantum-dash mode-locked laser; SMF lengths; asymmetrical cladding lasers; asymmetrical cladding structure; continuous-wave power; frequency 10 GHz; frequency comb generation; internal losses; narrow RF linewidth lasers; optical eigenmode; optical pulse generation; passive mode locking; quantum-dash mode-locked lasers; quasinull delay; single-mode fiber; subpicosecond pulses; tetahertz domain; Measurement by laser beam; Optical fibers; Optical variables measurement; Power lasers; Radio frequency; Slabs; High-power diode lasers; mode-locked semiconductor lasers; optical pulse generation; quantum-dot lasers;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/JSTQE.2013.2241025