• DocumentCode
    1488612
  • Title

    Comparison of flicker noise in single layer, AMR and GMR sandwich magnetic film devices

  • Author

    Wan, H. ; Bohlinger, M.M. ; Jenson, M. ; Hurst, A.

  • Author_Institution
    Solid State Electron. Center, Honeywell Inc., Plymouth, MN, USA
  • Volume
    33
  • Issue
    5
  • fYear
    1997
  • fDate
    9/1/1997 12:00:00 AM
  • Firstpage
    3409
  • Lastpage
    3411
  • Abstract
    Flicker noise comparison has been made on single layer NiFeCo, Sandwich AMR NiFeCo/TaN/NiFeCo and GMR NiFeCo/CoFe/Cu/CoFe/NiFeCo films. In a single magnetic domain state, AMR films have noise close to the thermal noise, GMR has 2-3 times higher noise, and in a state having a useful MR ratio, the GMR film has 10 times higher noise than AMR sandwich film, while the sandwich film has 10 times higher noise than single layer AMR film
  • Keywords
    flicker noise; giant magnetoresistance; magnetic anisotropy; magnetic multilayers; magnetoresistive devices; AMR; GMR; NiFeCo; NiFeCo-CoFe-Cu-CoFe-NiFeCo; NiFeCo-TaN-NiFeCo; flicker noise; sandwich magnetic film device; single layer magnetic film device; single magnetic domain state; thermal noise; 1f noise; Anisotropic magnetoresistance; Giant magnetoresistance; Magnetic domains; Magnetic fields; Magnetic films; Magnetic noise; Signal to noise ratio; Strips; Transfer functions;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/20.617960
  • Filename
    617960