Title :
Comparison of flicker noise in single layer, AMR and GMR sandwich magnetic film devices
Author :
Wan, H. ; Bohlinger, M.M. ; Jenson, M. ; Hurst, A.
Author_Institution :
Solid State Electron. Center, Honeywell Inc., Plymouth, MN, USA
fDate :
9/1/1997 12:00:00 AM
Abstract :
Flicker noise comparison has been made on single layer NiFeCo, Sandwich AMR NiFeCo/TaN/NiFeCo and GMR NiFeCo/CoFe/Cu/CoFe/NiFeCo films. In a single magnetic domain state, AMR films have noise close to the thermal noise, GMR has 2-3 times higher noise, and in a state having a useful MR ratio, the GMR film has 10 times higher noise than AMR sandwich film, while the sandwich film has 10 times higher noise than single layer AMR film
Keywords :
flicker noise; giant magnetoresistance; magnetic anisotropy; magnetic multilayers; magnetoresistive devices; AMR; GMR; NiFeCo; NiFeCo-CoFe-Cu-CoFe-NiFeCo; NiFeCo-TaN-NiFeCo; flicker noise; sandwich magnetic film device; single layer magnetic film device; single magnetic domain state; thermal noise; 1f noise; Anisotropic magnetoresistance; Giant magnetoresistance; Magnetic domains; Magnetic fields; Magnetic films; Magnetic noise; Signal to noise ratio; Strips; Transfer functions;
Journal_Title :
Magnetics, IEEE Transactions on
