Quantum-Confined Stark Effect in Ge/SiGe Quantum Wells on Si

Author

Yiwen Rong ; Yangsi Ge ; Yijie Huo ; Fiorentino, M. ; Tan, M. ; Kamins, T. ; Ochalski, T.J. ; Huyet, G. ; Harris, J.S.

Author_Institution

Solid State & Photonics Lab., Stanford Univ., Stanford, CA, USA

Volume

16

Issue

1

fYear

2010

Firstpage

85

Lastpage

92

Abstract

In this paper, we present observations of quantum confinement and quantum-confined Stark effect electroabsorption in Ge quantum wells with SiGe barriers grown on Si substrates. Though Ge is an indirect gap semiconductor, the resulting effects are at least as clear and strong as seen in typical III-V quantum well structures at similar wavelengths. We also designed and fabricated a coplanar high-speed modulator, and demonstrated modulation at 10 GHz and a 3.125-GHz eye diagram for 30-??m-sized modulators.

Keywords

Ge-Si alloys; III-V semiconductors; electroabsorption; quantum confined Stark effect; semiconductor quantum wells; substrates; Ge-SiGe; III-V quantum well structures; coplanar high-speed modulator; electroabsorption; frequency 10 GHz; frequency 3.125 GHz; indirect gap semiconductor; quantum confined Stark effect; semiconductor quantum wells; substrates; Germanium silicon alloys; High speed optical techniques; Laboratories; Optical arrays; Optical interconnections; Optical modulation; Photonic band gap; Signal analysis; Silicon germanium; Stark effect; Electroabsorption effect; Ge/SiGe quantum wells; germanium; optical interconnections; optical modulators; quantum-confined Stark effect (QCSE);

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/JSTQE.2009.2031502

Filename

5272202