A fully-integrated low-power low-noise 2.6-GHz bipolar VCO for wireless applications

Author

Samori, C. ; Zanchi, A. ; Levantino, S. ; Lacaita, A.L.

Author_Institution

Dipartimento di Elettronica ed Inf., Politecnico di Milano, Italy

Volume

11

Issue

5

fYear

2001

fDate

5/1/2001 12:00:00 AM

Firstpage

199

Lastpage

201

Abstract

The low quality factor of the inductors fabricated in fully-integrated LC tanks results in a poor indirect stability of the oscillators, which are therefore highly sensitive to low-frequency noise and disturbances coupled through substrate and supply lines. The paper addresses the design of a 2-V voltage-controlled oscillator (VCO) at 2.6 GHz fabricated in a Si-bipolar process with f/sub T/ of 20 GHz. The circuit bias and the transistor layout have been specifically optimized to minimize the phase noise degradation due to the intrinsic low indirect stability. A single sideband-to-carrier ratio (SSCR) of -104 dBc/Hz at 100 kHz is demonstrated with less than 14 mW power consumption.

Keywords

MMIC oscillators; Q-factor; UHF integrated circuits; UHF oscillators; elemental semiconductors; frequency stability; land mobile radio; phase noise; silicon; transceivers; voltage-controlled oscillators; 100 kHz; 14 mW; 2 V; 2.6 GHz; 20 GHz; Si; bipolar VCO; circuit bias; indirect stability; intrinsic low indirect stability; low-frequency noise; phase noise degradation; quality factor; sideband-to-carrier ratio; transistor layout; voltage-controlled oscillator; wireless applications; Circuit stability; Current measurement; Degradation; Energy consumption; Frequency; Inductors; Low-frequency noise; Phase noise; Q factor; Voltage-controlled oscillators;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/7260.923027

Filename

923027