DocumentCode :
1488757
Title :
Spectral interferometry of semiconductor nanostructures
Author :
Tignon, Jerome ; Marquezini, Maria V. ; Hasche, Tom ; Chemla, Daniel S.
Author_Institution :
Dept. of Phys., California Univ., Berkeley, CA, USA
Volume :
35
Issue :
4
fYear :
1999
fDate :
4/1/1999 12:00:00 AM
Firstpage :
510
Lastpage :
522
Abstract :
Fourier transform spectral interferometry is applied to measure both amplitude and phase of the electric field in different types of semiconductor nanostructures, thus determining the real and imaginary parts of the dielectric function. The importance of measuring the phase is shown and discussed in three studies. First, the phase measurement is used to access directly the refractive index across excitonic resonances in bulk GaAs and AlGaAs-GaAs quantum wells, with unprecedented resolution. Second, we measure the density dependence of the full dielectric function across a Fano resonance in bulk GaAs and show that this allows us to obtain some information on the collisional broadening of the usually hidden linewidth of the coupled exciton/continuum. Third, the phase is studied in a complex heterostructure, a semiconductor microcavity. We investigate and discuss the effect of the cavity detuning and of the excitation density
Keywords :
Fourier transform spectroscopy; III-V semiconductors; aluminium compounds; dielectric function; excitons; gallium arsenide; light interferometry; micro-optics; nanostructured materials; optical resonators; semiconductor quantum wells; AlGaAs-GaAs; AlGaAs-GaAs quantum wells; FT spectral interferometry; Fano resonance; Fourier transform spectral interferometry; GaAs; bulk GaAs; cavity detuning; collisional broadening; complex heterostructure; coupled exciton; density dependence; dielectric function; electric field amplitude measurement; electric field phase measurement; excitation density; excitonic resonances; full dielectric function; hidden linewidth; phase measurement; refractive index; semiconductor microcavity; semiconductor nanostructures; Density measurement; Dielectric measurements; Electric variables measurement; Fourier transforms; Gallium arsenide; Interferometry; Phase measurement; Refractive index; Resonance; Semiconductor nanostructures;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/3.753655
Filename :
753655
Link To Document :
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