Title :
Hole distribution in InGaAsP 1.3-μm multiple-quantum-well laser structures with different hole confinement energies
Author :
Silfvenius, Christofer ; Landgren, Gunnar ; Marcinkevicius, Saulius
Author_Institution :
Dept. of Electron., R. Inst. of Technol., Stockholm, Sweden
fDate :
4/1/1999 12:00:00 AM
Abstract :
We have investigated the hole distribution in strained InGaAsP multiple-quantum-well (MQW) structures by direct hole transport measurements with time-resolved photoluminescence spectroscopy. The results show that the hole transport time over the MQW primarily depends on the hole confinement energy in the wells and increases sharply with the well depth. A simple thermionic emission model indicates that the heavy holes escape predominantly over the light-hole barrier edge for strain-compensated MQW structures. The results are corroborated with observed laser performance data
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; hole mobility; indium compounds; laser transitions; photoluminescence; quantum well lasers; thermionic emission; time resolved spectroscopy; 1.3 mum; InGaAsP; InGaAsP 1.3-μm multiple-quantum-well laser structures; direct hole transport measurements; heavy holes; hole confinement energies; hole confinement energy; hole distribution; hole transport time; light-hole barrier edge; observed laser performance data; strain-compensated MQW structures; strained InGaAsP MQW laser structures; thermionic emission model; time-resolved photoluminescence spectroscopy; well depth; Charge carrier density; Energy measurement; Laser modes; Laser theory; Optical materials; Photoluminescence; Quantum well devices; Radiative recombination; Semiconductor lasers; Ultrafast optics;
Journal_Title :
Quantum Electronics, IEEE Journal of
