Carrier dynamics and microwave characteristics of GaAs-based quantum-well lasers

Author

Esquivias, I. ; Weisser, S. ; Romero, B. ; Ralston, J.D. ; Rosenzweig, J.

Author_Institution

Dept. de Technol. Fotonica, Univ. Politecnica de Madrid, Spain

Volume

35

Issue

4

fYear

1999

fDate

4/1/1999 12:00:00 AM

Firstpage

635

Lastpage

646

Abstract

We investigate the effects of carrier capture and re-emission on the electrical impedance, equivalent circuit, and modulation response of quantum-well (QW) laser diodes. The electrical impedance is shown to be a sensitive function of the time constants associated with carrier capture/transport and carrier re-emission. We compare the theoretical results with measured values of the electrical impedance of high-speed InGaAs-GaAs multiple-quantum-well lasers fabricated using different epilayer structures with a common lateral structure. The experimental results agree well with the theoretical model, allowing us to extract the effective carrier escape time and the effective carrier lifetime in the QWs, and to estimate the effective carrier capture/transport time

Keywords

III-V semiconductors; carrier lifetime; carrier mobility; electric impedance; gallium arsenide; indium compounds; quantum well lasers; GaAs-based quantum-well lasers; InGaAs-GaAs; QW laser diodes; carrier capture; carrier dynamics; carrier re-emission; common lateral structure; effective carrier escape time; effective carrier lifetime; electrical impedance; epilayer structures; equivalent circuit; high-speed InGaAs-GaAs multiple-quantum-well lasers; microwave characteristics; modulation response; sensitive function; time constants; Charge carrier lifetime; Diode lasers; Electric variables measurement; Equivalent circuits; Impedance measurement; Laser modes; Laser theory; Life estimation; Quantum well devices; Quantum well lasers;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.753669

Filename

753669