Title :
Thermal transient test based thermal structure function analysis of IGBT package
Author :
Yafei Luo ; Kajita, Yoshitaka ; Hatakeyama, T. ; Nakagawa, Sachiko ; Ishizuka, M.
Author_Institution :
Mentor Graphics Japan, Tokyo, Japan
Abstract :
The heat flow distribution in IGBT package is significantly affected by its interfacing materials and dimension of metal frame. In order to increase heat-sink capability which is critical for kW IGBT device, lateral heat spreading technology is introduced. To design in such 3D heat flux structure in real power device package, accurate thermal distribution analysis is required. Using three dimensional thermal CFD simulators is proven to be valid for thermal structural analysis, however in most of practical cases material properties like thermal conductivity or contact thermal resistance are always unknown. In this paper we are going show the possibility of utilizing thermal transient test and thermal structure function based approach to analyze thermal characteristic and heat flux in a real IGBT package.
Keywords :
computational fluid dynamics; heat sinks; heat transfer; insulated gate bipolar transistors; semiconductor device packaging; thermal conductivity; 3D heat flux structure; IGBT device; IGBT package; contact thermal resistance; heat flow distribution; heat-sink capability; interfacing materials; lateral heat spreading technology; metal frame; power device package; thermal conductivity; thermal distribution analysis; thermal structure function analysis; thermal transient test; three dimensional thermal CFD simulators; Current measurement; Heating; Insulated gate bipolar transistors; Temperature measurement; Thermal analysis; Thermal resistance; Transient analysis; measurement and instrumentation; power IGBT; structure function; thermal CFD simulation; thermal analysis; thermal transient test;
Conference_Titel :
Electronics Packaging (ICEP), 2014 International Conference on
Conference_Location :
Toyama
Print_ISBN :
978-4-904090-10-7
DOI :
10.1109/ICEP.2014.6826749