DocumentCode :
1488984
Title :
A 2.2-V operation, 2.4-GHz single-chip GaAs MMIC transceiver for wireless applications
Author :
Yamamoto, Kazuya ; Moriwaki, Takao ; Fujii, Takayuki ; Otsuji, Jun ; Miyashita, Miyo ; Miyazaki, Yukio ; Nishitani, Kazuo
Author_Institution :
High Frequency & Opt. Semicond. Div., Mitsubishi Electr. Corp., Hyogo, Japan
Volume :
34
Issue :
4
fYear :
1999
fDate :
4/1/1999 12:00:00 AM
Firstpage :
502
Lastpage :
512
Abstract :
A 2.2-V operation, single-chip GaAs MMIC transceiver has been successfully developed for 2.4-GHz-band wireless applications such as wireless local area network terminals. The chip is fabricated using a planar self-aligned gate field-effect transistor. To generate sufficient negative voltage for gate-biasing and to enhance switch power handling capability under a 2.2-V supply, a newly designed negative voltage generator with a voltage doubler (NVG-VD) and a switch control logic circuit are integrated on the chip, together with a power amplifier, a transmit/receive switch, and a low-noise amplifier. The NVG-VD is designed to produce both a 3.3-V positive step-up voltage and a -2.1-V negative voltage under 2.2 V in operation voltage. Biased with these outputs, the logic circuit accommodates high power outputs of over 25 dBm with a low operating voltage of 2.2 V in transmit mode, With a 2.45-GHz modulated signal based on IS-95 standards, a 21-dBm output power and a 33% efficiency are obtained at a ±1.25-MHz-offset adjacent channel power rejection of -45 dBc. In receive mode, a low-noise amplifier achieves a 1.8-dB noise figure and an 11-dB gain with a 3.0-mA current. This transceiver enables significant size and weight reductions in 2.4-GHz-band wireless application terminals
Keywords :
III-V semiconductors; field effect MMIC; gallium arsenide; transceivers; 1.8 dB; 11 dB; 2.2 V; 2.4 GHz; 3.0 mA; 33 percent; GaAs; NVG-VD; low-noise amplifier; negative voltage generator; personal communications; planar self-aligned gate field effect transistor; power amplifier; single-chip GaAs MMIC transceiver; switch control logic circuit; transmit/receive switch; voltage doubler; wireless local area network terminal; Field effect MMICs; Gallium arsenide; Logic circuits; Low-noise amplifiers; Power generation; Switches; Switching circuits; Transceivers; Voltage; Wireless LAN;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/4.753683
Filename :
753683
Link To Document :
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