Title :
Temperature dependence of InGaP/GaAs heterojunction bipolar transistor DC and small-signal behavior
Author :
Ahmari, David A. ; Raghavan, Gopal ; Hartmann, Quesnell J. ; Hattendorf, Michael L. ; Feng, Milton ; Stillman, Gregory E.
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
fDate :
4/1/1999 12:00:00 AM
Abstract :
This work describes the temperature dependence of the DC and small-signal performance of InGaP/GaAs heterojunction bipolar transistors (HBT´s) with different collector thicknesses. Detailed analyses of the small-signal performance and the temperature dependence of both DC and high-frequency parameters are presented. An HBT delay-time analysis is also presented and justified empirically. In addition, the factors causing the decrease in fT with temperature are described, and the variations in collector resistance and collector drift velocity with temperature are determined
Keywords :
III-V semiconductors; delay estimation; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; 25 to 150 C; DC behavior; HBT delay-time analysis; InGaP-GaAs; InGaP/GaAs HBT; collector drift velocity; collector resistance; collector thicknesses; heterojunction bipolar transistor; high-frequency parameters; small-signal behavior; temperature dependence; Bipolar transistors; Delay; Electron mobility; Etching; Gallium arsenide; Heterojunction bipolar transistors; Laboratories; Metallization; Microelectronics; Temperature dependence;
Journal_Title :
Electron Devices, IEEE Transactions on
