• DocumentCode
    1489092
  • Title

    The effect of Auger mechanism on n+-p GaInAsSb infrared photovoltaic detectors

  • Author

    Tian, Yuan ; Zhou, Tianming ; Zhang, Baolin ; Jiang, Hong ; Jin, Yixin

  • Author_Institution
    Inst. of Phys., Acad. Sinica, Changchun, China
  • Volume
    46
  • Issue
    4
  • fYear
    1999
  • fDate
    4/1/1999 12:00:00 AM
  • Firstpage
    656
  • Lastpage
    660
  • Abstract
    In this paper, the theoretical analysis of the Auger mechanism in n+-p GaInAsSb infrared photovoltaic detectors is reported. The lifetime caused by the Auger mechanism is calculated depending on the compositions, temperature, and carrier concentration. We also analyze the effect of material parameters on the detectivity of the n +-p GaInAsSb detectors. The calculated results show that the Auger mechanism could be suppressed by optimizing the material parameters, so that the performance of GaInAsSb infrared photovoltaic detectors is improved
  • Keywords
    Auger effect; III-V semiconductors; carrier density; carrier lifetime; gallium arsenide; indium compounds; infrared detectors; Auger mechanism; GaInAsSb; carrier concentration; detectivity; infrared photovoltaic detectors; lifetime; material parameters; Helium; Infrared detectors; Monitoring; Optoelectronic devices; Photodetectors; Photonic band gap; Photovoltaic systems; Radiative recombination; Solar power generation; Temperature dependence;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.753697
  • Filename
    753697
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1489092