Title :
The effect of Auger mechanism on n+-p GaInAsSb infrared photovoltaic detectors
Author :
Tian, Yuan ; Zhou, Tianming ; Zhang, Baolin ; Jiang, Hong ; Jin, Yixin
Author_Institution :
Inst. of Phys., Acad. Sinica, Changchun, China
fDate :
4/1/1999 12:00:00 AM
Abstract :
In this paper, the theoretical analysis of the Auger mechanism in n+-p GaInAsSb infrared photovoltaic detectors is reported. The lifetime caused by the Auger mechanism is calculated depending on the compositions, temperature, and carrier concentration. We also analyze the effect of material parameters on the detectivity of the n +-p GaInAsSb detectors. The calculated results show that the Auger mechanism could be suppressed by optimizing the material parameters, so that the performance of GaInAsSb infrared photovoltaic detectors is improved
Keywords :
Auger effect; III-V semiconductors; carrier density; carrier lifetime; gallium arsenide; indium compounds; infrared detectors; Auger mechanism; GaInAsSb; carrier concentration; detectivity; infrared photovoltaic detectors; lifetime; material parameters; Helium; Infrared detectors; Monitoring; Optoelectronic devices; Photodetectors; Photonic band gap; Photovoltaic systems; Radiative recombination; Solar power generation; Temperature dependence;
Journal_Title :
Electron Devices, IEEE Transactions on
