DocumentCode
1489133
Title
Decaborane (B10H14) ion implantation technology for sub-0.1-μm PMOSFET´s
Author
Goto, Ken-Ichi ; Matsuo, Jiro ; Tada, Yoko ; Sugii, Toshihiro ; Yamada, Isao
Author_Institution
Fujitsu Labs. Ltd., Atsugi, Japan
Volume
46
Issue
4
fYear
1999
fDate
4/1/1999 12:00:00 AM
Firstpage
683
Lastpage
689
Abstract
A low-energy, high-dosage boron ion implantation technology using a decaborane (B10H14) molecule is developed. Since B10N14 consists of ten boron atoms, they are implanted with about a one-tenth lower effective acceleration energy and ten times higher effective beam current compared with those of boron. We demonstrated an ultrashallow boron profile with 0.5 keV effective acceleration energy, which does not cause transient enhanced diffusion (TED) after rapid thermal annealing (RTA). Using this technology, we succeeded in fabricating 0.1-μm PMOSFET´s with good device performances and excellent suppression of short-channel effects
Keywords
MOSFET; boron; doping profiles; elemental semiconductors; ion implantation; rapid thermal annealing; silicon; 0.1 micron; 0.5 keV; PMOSFET; Si:B; decaborane ion implantation technology; effective acceleration energy; effective beam current; rapid thermal annealing; short-channel effects; ultrashallow boron profile; Acceleration; Annealing; Atomic measurements; Boron; CMOS process; Fabrication; Ion implantation; Laboratories; MOS devices; MOSFET circuits;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.753701
Filename
753701
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